Giant Negative Magnetoresistance in GdI2: Prediction and Realization

Felser, C.; Ahn, K.; Kremer, R.K.; Seshadri, R.; Simon, A.

doi:10.1006/jssc.1999.8274

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Giant Negative Magnetoresistance in GdI₂: Prediction and Realization

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引用

Felser, C., Ahn, K., Kremer, R., Seshadri, R., & Simon, A. (1999). Giant Negative Magnetoresistance in GdI₂: Prediction and Realization. Journal of Solid State Chemistry, 147(1), 19-25. doi:10.1006/jssc.1999.8274.

引用: https://hdl.handle.net/11858/00-001M-0000-0018-554E-8

要旨

The electronic structure of the layered d(1) compound GdI2 has been examined systematically in view of its relation to other layered d(1) systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface, The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5)K and displays large negative magnetoresistance approximate to 70% at 7 T close to room temperature, This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculations. (C) 1999 Academic Press.