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Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET–F2TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

MPS-Authors
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Stähler,  Julia
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Fulltext (public)

PhysRevLett.112.117801.pdf
(Publisher version), 696KB

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Citation

Mitrano, M., Cotugno, G., Clark, S., Singla, R., Kaiser, S., Stähler, J., et al. (2014). Pressure-Dependent Relaxation in the Photoexcited Mott Insulator ET–F2TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates. Physical Review Letters, 112(11): 117801. doi:10.1103/PhysRevLett.112.117801.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0018-5BD3-C
Abstract
We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET–F2TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find that the recombination times scale differently than for metals and semiconductors. A fit to our data based on the time-dependent extended Hubbard Hamiltonian suggests that the competition between local recombination and delocalization of the Mott-Hubbard exciton dictates the efficiency of the recombination.