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Epitaxial film growth and magnetic properties of Co2FeSi

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Zitation

Schneider, H., Jakob, G., Kallmayer, M., Elmers, H. J., Cinchetti, M., Balke, B., et al. (2006). Epitaxial film growth and magnetic properties of Co2FeSi. Physical Review B, 74(17): 124426, pp. 1-9. doi:10.1103/PhysRevB.74.174426.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-0018-67B9-9
Zusammenfassung
We have grown thin films of the Heusler compound Co2FeSi by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and L21 ordered growth. On Al2O3(112¯0) substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of 7/2 at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of 5.0μB/f.u. at 0K. The films on Al2O3 show an in-plane uniaxial anisotropy, while the epitaxial films are magnetically isotropic in the plane. Measurements of the x-ray magnetic circular dichroism of the films allowed us to determine element specific magnetic moments. Finally we have measured the spin polarization at the surface region by spin-resolved near-threshold photoemission and found it strongly reduced in contrast to the expected bulk value of 100%. Possible reasons for the reduced magnetization are discussed.