Benutzerhandbuch Datenschutzhinweis Impressum Kontakt





Epitaxial film growth and magnetic properties of Co2FeSi

Es sind keine MPG-Autoren in der Publikation vorhanden
Externe Ressourcen
Es sind keine Externen Ressourcen verfügbar
Volltexte (frei zugänglich)
Es sind keine frei zugänglichen Volltexte verfügbar
Ergänzendes Material (frei zugänglich)
Es sind keine frei zugänglichen Ergänzenden Materialien verfügbar

Schneider, H., Jakob, G., Kallmayer, M., Elmers, H. J., Cinchetti, M., Balke, B., et al. (2006). Epitaxial film growth and magnetic properties of Co2FeSi. Physical Review B, 74(17): 124426, pp. 1-9. doi:10.1103/PhysRevB.74.174426.

We have grown thin films of the Heusler compound Co2FeSi by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and L21 ordered growth. On Al2O3(112¯0) substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of 7/2 at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of 5.0μB/f.u. at 0K. The films on Al2O3 show an in-plane uniaxial anisotropy, while the epitaxial films are magnetically isotropic in the plane. Measurements of the x-ray magnetic circular dichroism of the films allowed us to determine element specific magnetic moments. Finally we have measured the spin polarization at the surface region by spin-resolved near-threshold photoemission and found it strongly reduced in contrast to the expected bulk value of 100%. Possible reasons for the reduced magnetization are discussed.