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Journal Article

Growth and characterization of Sc-doped EuO thin films

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Altendorf,  S. G.
Simone Altendyorf, Phsics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Reisner,  A.
Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Chang,  C. F.
Chun-Fu Chang, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Hollmann,  N.
Nils Hollmann, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Rata,  A. D.
Diana Rata, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Tjeng,  L. H.
Liu Hao Tjeng, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Altendorf, S. G., Reisner, A., Chang, C. F., Hollmann, N., Rata, A. D., & Tjeng, L. H. (2014). Growth and characterization of Sc-doped EuO thin films. Applied Physics Letters, 104(5): 052403, pp. 1-4. doi:10.1063/1.4863752.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-865C-3
Abstract
The preparation of 3d-transition metal-doped EuO thin films by molecular beam epitaxy is investigated using the example of Sc doping. The Sc-doped EuO samples display a good crystalline structure, despite the relatively small ionic radius of the dopant. The Sc doping leads to an enhancement of the Curie temperature to up to 125 K, remarkably similar to previous observations on lanthanide-doped EuO. (C) 2014 AIP Publishing LLC.