Suppression of martensitic phase transition at the Ni2MnGa film surface

Pörsch, P.; Kallmayer, M.; Eichhorn, T.; Jakob, G.; Elmers, H. J.; Jenkins, C. A.; Felser, C.; Ramesh, R.; Huth, M.

doi:10.1063/1.2957647

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Suppression of martensitic phase transition at the Ni₂MnGa film surface

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Pörsch, P., Kallmayer, M., Eichhorn, T., Jakob, G., Elmers, H. J., Jenkins, C. A., et al. (2008). Suppression of martensitic phase transition at the Ni₂MnGa film surface. Applied Physics Letters, 93(2): 022501, pp. 1-3. doi:10.1063/1.2957647.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-8A7F-2

Abstract

We investigated magnetic and structural properties at the surface of epitaxial Ni(2)MnGa(110) Heusler films using x-ray absorption spectroscopy and x-ray magnetic circular dichroism both in transmission and total electron yield mode. The magnetic shape memory films were prepared by dc sputtering from a stoichiometric target onto sapphire substrates at an optimized substrate temperature of 773 K. X-ray diffraction confirms a (110) oriented growth on Al(2)O(3)(11 (2) over bar0) and an austenite to martensite transition at 270-280 K. At the surface the martensitic phase transition and the magnetization are strongly suppressed. The deviation in the surface properties is caused by a Mn deficiency near the surface. (C) 2008 American Institute of Physics.