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On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode

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Zitation

Schmalhorst, J., Ebke, D., Weddemann, A., Hütten, A., Thomas, A., Reiss, G., et al. (2008). On the influence of bandstructure on transport properties of magnetic tunnel junctions with Co2Mn1−xFexSi single and multilayer electrode. Journal of Applied Physics, 104(4), 1-5. doi:10.1063/1.2973664.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-0018-8BEA-6
Zusammenfassung
The transport properties of magnetic tunnel junctions with different (110)-textured Heusler alloy electrodes such as Co2MnSi, Co2FeSi or Co2Mn0.5Fe0.5Si, AlOx barrier, and Co–Fe counterelectrode are investigated. The bandstructure of Co2Mn1−xFexSi is predicted to show a systematic shift in the position of the Fermi energy EF through the gap in the minority density of states while the composition changes from Co2MnSi toward Co2FeSi. Although this shift is indirectly observed by x-ray photoemission spectroscopy, all junctions show a large spin polarization of around 70% at the Heusler alloy/Al–O interface and are characterized by a very similar temperature and bias voltage dependence of the tunnel magnetoresistance. This suggests that these transport properties of these junctions are dominated by inelastic excitations and not by the electronic bandstructure.