English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy

MPS-Authors
There are no MPG-Authors in the publication available
External Resource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Ouardi, S., Gloskovskii, A., Balke, B., Jenkins, C. A., Barth, J., Fecher, G. H., et al. (2009). Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy. Journal of Physics D: Applied Physics, 42(8): 084011, pp. 1-8. doi:10.1088/0022-3727/42/8/084011.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0018-9901-0
Abstract
This work reports on the electronic properties of thin films of the Heusler compound Co2MnSi studied by means of hard x-ray photoelectron spectroscopy (HAXPES). The results of photoelectron spectroscopy from multilayered thin films excited by photons of 2-8 keV are presented. The measurements were performed on (substrate/buffer layer/Co2MnSi(z)/capping layer) multilayers with a thickness z ranging from 0 to 50 nm. It is shown that high energy spectroscopy is a valuable tool for non-destructive depth profiling. The experimentally determined values of the inelastic electron mean free path in Co2MnSi increase from about 19.5 to 67 angstrom on increasing the kinetic energy from about 1.9 to 6.8 keV. The influence of the thermal treatment of Co2MnSi thin films on the electronic properties was also explored. The structure of the thin films is significantly improved by heat treatment as revealed by x-ray diffraction. It was found that the electronic structure of annealed samples as measured by photoelectron spectroscopy is similar to that of a well-ordered bulk reference sample. The samples without heat treatment show strong deviations from the electronic structure of bulk material. The differences between the disordered and the ordered films are also observed in core level spectra. Chemical shifts of about 100 meV are observed at the Mn 2p states. The stronger localization of the Mn d states in the ordered samples is obvious from the multiplet satellite of the Mn 2p(3/2) state.