Hall effect in laser ablated Co2(Mn,Fe)Si thin films

Schneider, H.; Vilanova, E.; Balke, B.; Felser, C.; Jakob, G.

doi:10.1088/0022-3727/42/8/084012

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Hall effect in laser ablated Co₂(Mn,Fe)Si thin films

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Schneider, H., Vilanova, E., Balke, B., Felser, C., & Jakob, G. (2009). Hall effect in laser ablated Co₂(Mn,Fe)Si thin films. Journal of Physics D: Applied Physics, 42(8), 1-4. doi:10.1088/0022-3727/42/8/084012.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-9A13-F

Abstract

Pulsed laser deposition was employed to grow thin films of the Heusler compounds Co2MnSi and Co2FeSi. Epitaxial growth was realized both directly on MgO(1 0 0) and on a Cr or Fe buffer layer. Structural analysis by x-ray and electron diffraction shows for both materials the ordered L21 structure. Bulk magnetization was determined with a SQUID magnetometer. The values agree with the Slater–Pauling rule for half-metallic Heusler compounds. On the films grown directly on the substrate measurements of the Hall effect have been performed. The normal Hall effect is nearly temperature independent and points towards a compensated Fermi surface. The anomalous contribution is found to be dominated by skew scattering. A remarkable sign change in both normal and anomalous Hall coefficients is observed on changing the valence electron count from 29 (Mn) to 30 (Fe).