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Hall effect in laser ablated Co2(Mn,Fe)Si thin films

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Citation

Schneider, H., Vilanova, E., Balke, B., Felser, C., & Jakob, G. (2009). Hall effect in laser ablated Co2(Mn,Fe)Si thin films. Journal of Physics D: Applied Physics, 42(8), 1-4. doi:10.1088/0022-3727/42/8/084012.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0018-9A13-F
Abstract
Pulsed laser deposition was employed to grow thin films of the Heusler compounds Co2MnSi and Co2FeSi. Epitaxial growth was realized both directly on MgO(1 0 0) and on a Cr or Fe buffer layer. Structural analysis by x-ray and electron diffraction shows for both materials the ordered L21 structure. Bulk magnetization was determined with a SQUID magnetometer. The values agree with the Slater–Pauling rule for half-metallic Heusler compounds. On the films grown directly on the substrate measurements of the Hall effect have been performed. The normal Hall effect is nearly temperature independent and points towards a compensated Fermi surface. The anomalous contribution is found to be dominated by skew scattering. A remarkable sign change in both normal and anomalous Hall coefficients is observed on changing the valence electron count from 29 (Mn) to 30 (Fe).