Improvement of structural, electronic, and magnetic properties of Co2MnSi thin 
films by He+ irradiation

Gaier, O.; Hamrle, J.; Hillebrands, B.; Kallmayer, M.; Pörsch, P.; Schönhense, G.; Elmers, H. J.; Fassbender, J.; Gloskovskii, A.; Jenkins, C. A.; Felser, C.; Ikenaga, E.; Sakuraba, Y.; Tsunegi, S.; Oogane, M.; Ando, Y.

doi:10.1063/1.3119188

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Improvement of structural, electronic, and magnetic properties of Co₂MnSi thin films by He⁺ irradiation

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Gaier, O., Hamrle, J., Hillebrands, B., Kallmayer, M., Pörsch, P., Schönhense, G., et al. (2009). Improvement of structural, electronic, and magnetic properties of Co₂MnSi thin films by He⁺ irradiation. Applied Physics Letters, 94(15): 152508, pp. 1-3. doi:10.1063/1.3119188.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-9B06-5

Abstract

The influence of 30 keV He+ ion irradiation on structural, electronic, and magnetic properties of Co2MnSi thin films with a partial B2 order was investigated. It was found that room temperature irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization toward the bulk properties of a well-ordered Co2MnSi Heusler compound.