Hard x-ray photoemission spectroscopy of Bi2S3 thin films

ten Haaf, Sebastian; Balke, Benjamin; Felser, Claudia; Jakob, Gerhard

doi:10.1063/1.4748299

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Hard x-ray photoemission spectroscopy of Bi₂S₃ thin films

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ten Haaf, S., Balke, B., Felser, C., & Jakob, G. (2012). Hard x-ray photoemission spectroscopy of Bi₂S₃ thin films. Journal of Applied Physics, 112(5): 053705, pp. 1-4. doi:10.1063/1.4748299.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-A868-4

Abstract

The electronic structure of polycrystalline Bi2S3 thin films deposited by thermal evaporation under high vacuum conditions was investigated with respect to their potential use as absorber materials in p-i-n solar cells by means of hard x-ray photoemission spectroscopy at the PETRA III synchrotron. A clear influence of the post-deposition treatment on the electronic structure could be observed, resulting in a lowering of the Fermi level as well as in a change of the electronic states in the valence band. Furthermore, chemical shifts of Bi2S3 were determined in the bulk-sensitive hard x-ray regime as Delta E-B,E-Bi = 1:35 eV and Delta E-B,E-S = -2:80 eV. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748299]