Hard x-ray photoelectron spectroscopy of chalcopyrite solar cell components

Gloskovskii, A.; Jenkins, C. A.; Ouardi, Siham; Balke, B.; Fecher, G. H.; Dai, X. -F.; Gruhn, T.; Johnson, B.; Lauermann, I.; Caballero, R.; Kaufmann, C. A.; Felser, C.

doi:10.1063/1.3687197

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Hard x-ray photoelectron spectroscopy of chalcopyrite solar cell components

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Gloskovskii, A., Jenkins, C. A., Ouardi, S., Balke, B., Fecher, G. H., Dai, X.-.-F., et al. (2012). Hard x-ray photoelectron spectroscopy of chalcopyrite solar cell components. Applied Physics Letters, 100(9): 092108, pp. 1-3. doi:10.1063/1.3687197.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-A727-B

Abstract

Hard x-ray photoelectron spectroscopy is used to examine the partial density of states of Cu(In,Ga)Se-2 (CIGSe), a semiconducting component of solar cells. The investigated, thin Cu(In,Ga)(2) films were produced by multi-stage co-evaporation. Details of the measured core level and valence band spectra are compared to the calculated density of states. The semiconducting type electronic structure of Cu(In,Ga)(2) is clearly resolved in the hard x-ray photoelectron spectra. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3687197]