Efficient Spin Injector Scheme Based on Heusler Materials

Chadov, Stanislav; Graf, Tanja; Chadova, Kristina; Dai, Xuefang; Casper, Frederick; Fecher, Gerhard H.; Felser, Claudia

doi:10.1103/PhysRevLett.107.047202

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Efficient Spin Injector Scheme Based on Heusler Materials

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Chadov, S., Graf, T., Chadova, K., Dai, X., Casper, F., Fecher, G. H., et al. (2011). Efficient Spin Injector Scheme Based on Heusler Materials. Physical Review Letters, 107(4): 047202, pp. 1-4. doi:10.1103/PhysRevLett.107.047202.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-B503-C

Abstract

We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.