English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

Exploring Co2MnAl Heusler compound for anomalous Hall effect sensors

MPS-Authors
There are no MPG-Authors in the publication available
External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Vilanova Vidal, E., Stryganyuk, G., Schneider, H., Felser, C., & Jakob, G. (2011). Exploring Co2MnAl Heusler compound for anomalous Hall effect sensors. Applied Physics Letters, 99(13): 132509, pp. 1-3. doi:10.1063/1.3644157.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-B5CF-6
Abstract
Sets of Heusler compound Co2MnAl thin films were grown on MgO (100) and Si (100) substrates by radio frequency magnetron sputtering. Composition, magnetic, and transport properties were studied systematically for samples deposited at different conditions. In particular, the anomalous Hall effect resistivity presents an extraordinarily temperature independent behavior in a moderate magnetic field range from 0 to 0.6 T. We analyzed the off-diagonal transport at temperatures up to 300 °C. Our data show the suitability of the material for Hall sensors working well above room temperature.