Exploring Co2MnAl Heusler compound for anomalous Hall effect sensors

Vilanova Vidal, E.; Stryganyuk, G.; Schneider, H.; Felser, C.; Jakob, G.

doi:10.1063/1.3644157

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Exploring Co₂MnAl Heusler compound for anomalous Hall effect sensors

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Vilanova Vidal, E., Stryganyuk, G., Schneider, H., Felser, C., & Jakob, G. (2011). Exploring Co₂MnAl Heusler compound for anomalous Hall effect sensors. Applied Physics Letters, 99(13): 132509, pp. 1-3. doi:10.1063/1.3644157.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-B5CF-6

Abstract

Sets of Heusler compound Co2MnAl thin films were grown on MgO (100) and Si (100) substrates by radio frequency magnetron sputtering. Composition, magnetic, and transport properties were studied systematically for samples deposited at different conditions. In particular, the anomalous Hall effect resistivity presents an extraordinarily temperature independent behavior in a moderate magnetic field range from 0 to 0.6 T. We analyzed the off-diagonal transport at temperatures up to 300 °C. Our data show the suitability of the material for Hall sensors working well above room temperature.