Electronic structure of Pt based topological Heusler compounds with C1b 
structure and "zero band gap"

Ouardi, Siham; Shekhar, Chandra; Fecher, Gerhard H.; Kozina, Xeniya; Stryganyuk, Gregory; Felser, Claudia; Ueda, Shigenori; Kobayashi, Keisuke

doi:10.1063/1.3592834

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Electronic structure of Pt based topological Heusler compounds with C1_b structure and "zero band gap"

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Ouardi, S., Shekhar, C., Fecher, G. H., Kozina, X., Stryganyuk, G., Felser, C., et al. (2011). Electronic structure of Pt based topological Heusler compounds with C1_b structure and "zero band gap". Applied Physics Letters, 98(21): 211901, pp. 1-3. doi:10.1063/1.3592834.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-B8A5-8

Abstract

Besides of their well-known wide range of properties it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1(b) structure exhibit a zero band gap behavior and are topological insulators induced by their inverted band structure. In the present study, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy. The measured valence band spectra are clearly resolved and in well agreement to the first-principles calculations of the electronic structure of the compounds. The experimental results give clear evidence for the zero band gap state. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3592834]