Thermoelectric properties and electronic structure of substituted Heusler 
compounds: NiTi0.3-xScxZr0.35Hf0.35Sn

Ouardi, Siham; Fecher, Gerhard H.; Balke, Benjamin; Schwall, Michael; Kozina, Xeniya; Stryganyuk, Gregory; Felser, Claudia; Ikenaga, Eiji; Yamashita, Yoshiyuki; Ueda, Shigenori; Kobayashi, Keisuke

doi:10.1063/1.3531662

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Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi_0.3-xSc_xZr_0.35Hf_0.35Sn

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Ouardi, S., Fecher, G. H., Balke, B., Schwall, M., Kozina, X., Stryganyuk, G., et al. (2010). Thermoelectric properties and electronic structure of substituted Heusler compounds: NiTi_0.3-xSc_xZr_0.35Hf_0.35Sn. Applied Physics Letters, 97(25): 252113, pp. 1-3. doi:10.1063/1.3531662.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-B6AE-8

Abstract

The effect of Ti substitution by Sc on the thermoelectric properties of the Heusler compounds NiTi0.3-xScxZr0.35Hf0.35Sn (where 0 < x <= 0.05) was studied. The thermoelectric properties were investigated by measuring the electrical conductivity, Seebeck coefficient, and thermal conductivity. A reduction of the thermal conductivity by a factor of 2 was obtained by substitution of Ti by Sc. The pure compound NiTi0.3Zr0.35Hf0.35Sn showed n-type conductivity with a Seebeck coefficient of -288 mu V/K at 350 K, while under Sc substitution the system switched to p-type behavior. A maximum Seebeck coefficient of +230 mu V/K (350 K) was obtained by 4% Sc substitution, which is the highest value for p-type thermoelectric compounds based on Heusler alloys. The electronic structure was studied by photoelectron spectroscopy excited by hard x-ray synchrotron radiation. Massive in gap states are observed for the parent compound. This proves that the electronic states close to the Fermi energy play a key role on the behavior of the transport properties. Especially, they are responsible for the high, negative Seebeck coefficient of the parent compound. (C) 2010 American Institute of Physics. [doi:10.1063/1.3531662]