In-plane microwave conductivity of the single-layer cuprate Tl2Ba2CuO6+δ

Broun, D.M.; Morgan, D.C.; Ormeno, R.J.; Lee, S.F.; Tyler, A.W.; Mackenzie, A. P.; Waldram, J.R.

doi:10.1103/PhysRevB.56.R11443

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In-plane microwave conductivity of the single-layer cuprate Tl₂Ba₂CuO_6+δ

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Broun, D., Morgan, D., Ormeno, R., Lee, S., Tyler, A., Mackenzie, A. P., et al. (1997). In-plane microwave conductivity of the single-layer cuprate Tl₂Ba₂CuO_6+δ. Physical Review B, 56(18), R11443-R11446. doi:10.1103/PhysRevB.56.R11443.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-EB91-8

Abstract

We have measured the in-plane microwave conductivity of nearly optimally doped single crystals (Tc=78 K) of Tl2Ba2CuO6+δ (Tl-2201) at 14.4, 24.8, and 35.9 GHz using cavity perturbation methods. At low temperatures, the in-plane penetration depth has a strong, linear temperature dependence, indicative of an unconventional pairing state with line nodes. The real part of the conductivity shows a broad, frequency-dependent peak near 30 K, similar to that seen in YBa2Cu3O7-δ and Bi2Sr2CaCu2O8 crystals. With tetragonal crystal symmetry and a single CuO2 plane per unit cell, Tl-2201 is the simplest structure so far to display these features.