Low-temperature Hall effect in substituted Sr2RuO4

Kikugawa, Naoki; Mackenzie, Andrew Peter; Bergemann, Christoph; Maeno, Yoshiteru

doi:10.1103/PhysRevB.70.174501

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Low-temperature Hall effect in substituted Sr₂RuO₄

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Kikugawa, N., Mackenzie, A. P., Bergemann, C., & Maeno, Y. (2004). Low-temperature Hall effect in substituted Sr₂RuO₄. Physical Review B, 70(17): 174501, pp. 1-5. doi:10.1103/PhysRevB.70.174501.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-EEFA-2

Abstract

We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr2+ has been substituted by La3+ (Sr2-yLayRuO4) or Ru4+ by Ti4+ (Sr2Ru1-xTixO4). For undoped Sr2RuO4, the purity is so high that the strong-field Hall coefficient can be measured for fields above 4 T. The conventional weak-field Hall coefficient as a function of doping shows a sharp jump and sign change at ysimilar to0.01 that is unrelated to either a sharp change in Fermi-surface topography or a magnetic instability. The implications of these results are discussed.