Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO2

Hicks, Clifford W.; Gibbs, Alexandra S.; Mackenzie, Andrew P.; Takatsu, Hiroshi; Maeno, Yoshiteru; Yelland, Edward A.

doi:10.1103/PhysRevLett.109.116401

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Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO₂

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Citation

Hicks, C. W., Gibbs, A. S., Mackenzie, A. P., Takatsu, H., Maeno, Y., & Yelland, E. A. (2012). Quantum Oscillations and High Carrier Mobility in the Delafossite PdCoO₂. Physical Review Letters, 109(11): 116401, pp. 1-5. doi:10.1103/PhysRevLett.109.116401.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0018-F2C0-3

Abstract

We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 mu Omega cm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T-5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is similar to 20 mu m, approximately 10(5) lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.