Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: 
An Ab Initio Approach

Duff, A.; Lymperakis, L.; Neugebauer, J.

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Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Duff, A., Lymperakis, L., & Neugebauer, J. (2013). Limits of Indium Incorporation on In1-xGaxN {0001} III- and N-Polar Surfaces: An Ab Initio Approach. Poster presented at 10th International Conference on Nitride Semiconductors, Washigton DC, USA.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-21FE-2

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