Understanding and overcoming doping limits in GaN

Neugebauer, J.

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Understanding and overcoming doping limits in GaN

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J. (2013). Understanding and overcoming doping limits in GaN. Talk presented at SPIE Photonics West 2013. San Francisco, CA, USA. 2013-02-02 - 2013-02-07.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2516-C

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