A mechanistic study of the electrochemical oxygen reduction on the model 
semiconductor n-Ge(100) by ATR-IR and DFT

Nayak, S.; Biedermann, P. U.; Stratmann, M.; Erbe, A.

doi:10.1039/C2CP43909C

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A mechanistic study of the electrochemical oxygen reduction on the model semiconductor n-Ge(100) by ATR-IR and DFT

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Nayak, S.
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Biedermann, P. U.
Atomistic Modelling, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Stratmann, M.
Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Erbe, A.
Interface Spectroscopy, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Nayak, S., Biedermann, P. U., Stratmann, M., & Erbe, A. (2013). A mechanistic study of the electrochemical oxygen reduction on the model semiconductor n-Ge(100) by ATR-IR and DFT. Physical Chemistry Chemical Physics, 15(16), 5771-5781. doi:10.1039/C2CP43909C.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2562-F

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