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Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

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Tytko,  Darius
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Choi,  Pyuck-Pa
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Raabe,  Dierk
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Mehrtens, T., Schowalter, M., Tytko, D., Choi, P.-P., Raabe, D., Hoffmann, L., et al. (2013). Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography. Applied Physics Letters, 102(13): 132112. doi:10.1063/1.4799382.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-25CE-E
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