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Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Albrecht, M., Markurt, T., Schulz, T., Lymperakis, L., Duff, A., Neugebauer, J., et al. (2012). Dislocation Mechanisms and Strain Relaxation in the Growth of GaN on Silicon Substrates for Solid State Lighting. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-28D7-2
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