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Excitonic emission from a-type screw dislocations in GaN

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L., Albrecht, M., & Neugebauer, J. (2012). Excitonic emission from a-type screw dislocations in GaN. Talk presented at International Conference on Extended Defects in Semiconductors. Thessaloniki, Greek. 2012-06-24 - 2012-06-29.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-28DF-1
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