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Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion

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Pfanner,  Gernot
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt,  Christoph
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Pfanner, G., Freysoldt, C., Neugebauer, J., & Gerstmann, U. (2012). Ab initio EPR parameters for dangling-bond defect complexes in silicon: Effect of Jahn-Teller distortion. Physical Review B, 85(19): 195202, pp. 1-8. doi:10.1103/PhysRevB.85.195202.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-29C5-6
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