Doping and growth issues in group-III nitrides: An ab initio perspective

Neugebauer, J.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Talk

Doping and growth issues in group-III nitrides: An ab initio perspective

MPS-Authors

/persons/resource/persons125293

Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Neugebauer, J. (2011). Doping and growth issues in group-III nitrides: An ab initio perspective. Talk presented at Workshop on III-Nitrides Growth, Characterization and Simulation. Berlin, Germany. 2011-10-12 - 2011-10-13.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-2F41-B

Abstract

There is no abstract available