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EPR parameters of the dangling bond defect in crystalline and amorphous silicon: A DFT-study

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Pfanner,  G.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt,  C.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Pfanner, G., Freysoldt, C., & Neugebauer, J. (2011). EPR parameters of the dangling bond defect in crystalline and amorphous silicon: A DFT-study. Poster presented at Euromat 2011, Montpellier, France.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-2FE7-A
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