Growth process, characterization, and modeling of electronic properties of 
coupled InAsSbP nanostructures

Marquardt, O.; Hickel, T.; Neugebauer, J.; Gambaryan, K. M.; Aroutiounian, V. M.

doi:10.1063/1.3624621

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Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures

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Hickel, T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Marquardt, O., Hickel, T., Neugebauer, J., Gambaryan, K. M., & Aroutiounian, V. M. (2011). Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. Journal of Applied Physics, 110(4), 043708-1-043708-6. doi:10.1063/1.3624621.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-3078-0

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