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Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces

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Duff,  A.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis,  L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based comparitive study of In incorporation and surface segregation on III- and N-face {0001} InGaN surfaces. Talk presented at 9th International Conference of Nitride Semi-Conductors. Glasgow, UK. 2011-07-10 - 2011-07-15.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-30E6-7
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