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Ab-initio based growth simulations of Ga- and N- polar InGaN surfaces: A comparitive study

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Duff,  A.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis,  L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125293

Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Duff, A., Lymperakis, L., & Neugebauer, J. (2011). Ab-initio based growth simulations of Ga- and N- polar InGaN surfaces: A comparitive study. Talk presented at CM-Workshop. Akademie Biggesee, Attendorn, Germany. 2011-07-06 - 2011-07-07.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-310A-D
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