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A Detailed Investigation of Native and Light-induced Defects in Hydrogenated Amorphous Silicon by Electron-spin Resonance

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Pfanner,  G.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt,  C.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Fehr, M., Schnegg, A., Teutloff, C., Bittl, R., Astakhov, O., Finger, F., et al. (2011). A Detailed Investigation of Native and Light-induced Defects in Hydrogenated Amorphous Silicon by Electron-spin Resonance. Talk presented at MRS Spring Meeting and Exhibit 2011. San Francisco, CA, USA. 2011-04-26.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-3234-7
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