Characterization of grain boundaries in Cu(In,Ga)Se2 films using atom probe 
tomography

Cojocaru-Mirédin, O.; Choi, P.; Abou-Ras, D.; Schmidt, S. S.; Caballero, R.; Raabe, D.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Characterization of grain boundaries in Cu(In,Ga)Se₂ films using atom probe tomography

MPS-Authors

/persons/resource/persons125090

Cojocaru-Mirédin, O.
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125088

Choi, P.
Atom Probe Tomography, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125330

Raabe, D.
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Cojocaru-Mirédin, O., Choi, P., Abou-Ras, D., Schmidt, S. S., Caballero, R., & Raabe, D. (2011). Characterization of grain boundaries in Cu(In,Ga)Se₂ films using atom probe tomography. Journal of Photovoltaics, 1, 207-212.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-34BC-5

Abstract

There is no abstract available