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Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN

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Lymperakis,  L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Kioseoglou, J., Kalesaki, E., Lymperakis, L., Neugebauer, J., Komninou, P., & Karakostas, T. (2011). Electronic structure of 1/6 <20 2¯3> partial dislocations in wurtzite GaN. Journal of Applied Physics, 109, 083511-1-083511-6. doi:10.1063/1.3569856.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-3521-A
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