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Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures

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Marquardt,  O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel,  T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Marquardt, O., Gambaryan, K. M., Aroutiounian, V. M., Hickel, T., & Neugebauer, J. (2010). Growth process, characterization and optoelectronic properties of InAsSbP dot-pit cooperative nanostructures. Talk presented at VCIAN 2010. Santorini, Greece. 2010-06-21 - 2010-06-25.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-38B0-3
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