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Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots

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Marquardt,  O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel,  T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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引用

Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Polarization-induced charge carrier separation in realistic polar and nonpolar grown GaN quantum dots. Talk presented at Collaborative Conference on Interacting Nanostructures CCIN'09. San Diego, CA, USA. 2009-11-09 - 2009-11-13.


引用: http://hdl.handle.net/11858/00-001M-0000-0019-3DF9-A
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