Polarization-induced charge carrier separation in polar and nonpolar grown GaN 
quantum dots

Marquardt, O.; Hickel, T.; Neugebauer, J.

doi:10.1063/1.3246864

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Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots

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Marquardt, O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel, T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Polarization-induced charge carrier separation in polar and nonpolar grown GaN quantum dots. Journal of Applied Physics, 106, 083707-1-083707-7. doi:10.1063/1.3246864.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-3E46-1

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