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Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN

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Lange,  B.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Freysoldt,  C.
Defect Chemistry and Spectroscopy, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lange, B., Freysoldt, C., & Neugebauer, J. (2009). Role of the parasitic Mg3N2 phase in post-growth activation of p-doped Mg:GaN. Poster presented at CECAM Workshop 09: Which Electronic Structure Method for the Study of Defects?, CECAM-HQ-EPFL, Lausanne, Switzerland.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-40C2-5
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