Investigation of group III-nitride semiconductor nanostructures using an 
eight-band k.p formalism

Marquardt, O.; Hickel, T.; Neugebauer, J.

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Investigation of group III-nitride semiconductor nanostructures using an eight-band k.p formalism

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Marquardt, O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Hickel, T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Marquardt, O., Hickel, T., & Neugebauer, J. (2009). Investigation of group III-nitride semiconductor nanostructures using an eight-band k.p formalism. Talk presented at APS March meeting. Pittsburgh, PA, USA. 2009-03-16 - 2009-03-20.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-421A-4

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