Influence of strain and polarization on electronic properties of a GaN/AlN 
quantum dot

Young, T. D.; Marquardt, O.

doi:10.1002/pssc.200880901

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Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot

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Marquardt, O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Young, T. D., & Marquardt, O. (2009). Influence of strain and polarization on electronic properties of a GaN/AlN quantum dot. Physica Status Solidi C, C6(S2), S557-S560. doi:10.1002/pssc.200880901.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-429E-9

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