English
 
User Manual Privacy Policy Disclaimer Contact us
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT

Released

Journal Article

A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

MPS-Authors
/persons/resource/persons125272

Marquardt,  O.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125381

Schulz,  S.
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125180

Hickel,  T.
Computational Phase Studies, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125293

Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

External Ressource
No external resources are shared
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Marquardt, O., Mourad, D., Schulz, S., Hickel, T., Czycholl, G., & Neugebauer, J. (2008). A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Physical Review B, 78: 235302.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-4509-1
Abstract
There is no abstract available