Optimizing materials properties and epitaxial growth of semiconductor devices 
by ab initio based multiscale modeling

Neugebauer, J.

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Optimizing materials properties and epitaxial growth of semiconductor devices by ab initio based multiscale modeling

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J. (2008). Optimizing materials properties and epitaxial growth of semiconductor devices by ab initio based multiscale modeling. Talk presented at Workshop "Molecular Modelling and Simulation in Applied Materials Science". Frankfurt a. M., Germany. 2008-03-10 - 2008-03-11.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-4B0F-9

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