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A Theoretical Study of Copper Contaminated Dislocations in Silicon

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Blumenau,  A. T.
Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Fujita, N., Jones, R., Öberg, S., Briddon, P. R., & Blumenau, A. T. (2008). A Theoretical Study of Copper Contaminated Dislocations in Silicon. Solid State Phenomena, 131-133, 259-264.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-4DD0-3
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