Theoretical Aspects on the Formation of the Tri-interstitial Nitrogen Defect in 
Silicon

Fujita, N.; Jones, R.; Eberlein, T. A. G.; Öberg, S.; Briddon, P. R.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Theoretical Aspects on the Formation of the Tri-interstitial Nitrogen Defect in Silicon

MPS-Authors

Fujita, N.
Max Planck Society;

Eberlein, T. A. G.
Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Fujita, N., Jones, R., Eberlein, T. A. G., Öberg, S., & Briddon, P. R. (2008). Theoretical Aspects on the Formation of the Tri-interstitial Nitrogen Defect in Silicon. Solid State Phenomena, 131-133, 265-269.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-4DD4-C

Abstract

There is no abstract available