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Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys

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Abu-Farsakh,  H.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

/persons/resource/persons125293

Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Abu-Farsakh, H., Neugebauer, J., & Albrecht, M. (2007). Ab-initio study of compositional anti-correlation of In and N in InGaAsN alloys. Poster presented at The 7th International Conference of Nitride Semiconductors (ICNS-7), Las Vegas, NV, USA.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5054-F
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