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Extended defects in GaN from an atomistic modelling point view

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Blumenau,  A. T.
Atomistic Modelling in Interface Science, Interface Chemistry and Surface Engineering, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Blumenau, A. T. (2007). Extended defects in GaN from an atomistic modelling point view. Talk presented at OPTO 2007, Integrated Optoelectronic Devices. San Jose, California, USA. 2007-01-20 - 2007-01-25.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-53F3-2
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