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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory.

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Rinke, P., Qteish, A., Winkelnkemper, M., Bimberg, D., Neugebauer, J., & Scheffler, M. (2006). Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory. Applied Physics Letters, 89(16): 161919.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-5C79-E
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