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Polarity inversion of GaN (0001) surfaces induced by Si adsorption

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Neugebauer,  J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Rosa, A. L., & Neugebauer, J. (2006). Polarity inversion of GaN (0001) surfaces induced by Si adsorption. Surface Science, 600(2), 229-335. doi:10.1016/j.susc.2005.10.030.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-5C7D-6
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