Ab initio based multiscale modeling of dislocations in GaN

Neugebauer, J.

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Ab initio based multiscale modeling of dislocations in GaN

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J. (2005). Ab initio based multiscale modeling of dislocations in GaN. Talk presented at E-MRS-Fall Meeting. Warsaw, Poland. 2005-09-05 - 2005-09-07.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5E77-2

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