The role of strain fields, core structure, and native defects on the electrical 
activity of dislocations in GaN

Lymperakis, L.; Neugebauer, J.

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The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN

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Lymperakis, L.
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, J.
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Lymperakis, L., & Neugebauer, J. (2005). The role of strain fields, core structure, and native defects on the electrical activity of dislocations in GaN. Talk presented at The 6th International Conference on Nitride Semiconductors. Bremen. 2005-08-28 - 2005-09-02.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0019-5EC5-0

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