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Orientation dependence of nanoindentation pile-up patterns and of nanoindentation microtextures in copper single crystals

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Wang,  Yanwen
Theory and Simulation, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Raabe,  Dierk
Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Klüber,  Christian
Theory and Simulation, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Roters,  Franz
Theory and Simulation, Microstructure Physics and Alloy Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Wang, Y., Raabe, D., Klüber, C., & Roters, F. (2004). Orientation dependence of nanoindentation pile-up patterns and of nanoindentation microtextures in copper single crystals. Acta Materialia, 52(8), 2229-2238. doi:10.1016/j.actamat.2004.01.016.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0019-654B-2
Abstract
We present a study about the dependence of nanoindentation pile-up patterns and of microtextures on the rystallographic orientation using high purity copper single crystals. Experiments were conducted on a Hysitron nanoindentation setup using a conical indenter in order to avoid symmetries others than those of the crystal structure. Orientation measurements were conducted using a high resolution electron back-scatter diffraction technique for the automated acquisition of texture mappings around the indents. Simulations were carried out by means of a 3D elastic–viscoplastic crystal plasticity finite element method which takes full account of crystallographic slip and orientation changes during indentation. The experiments as well as the simulations show that the pile-up patterns on the surfaces of (0 0 1)-, (0 1 1)- and (1 1 1)-oriented single crystals have four-, two-, and sixfold symmetry, respectively. The different pile-up patterns can be explained in terms of the strong crystallographic anisotropy of the out-of-plane displacements around the indents. Pronounced accumulation of material entailing characteristic pile-up patterns occurs along the intersection vectors between the primary crystallographic slip planes and the indented surface planes.